Preface ....................................................... vii
Editors ........................................................ xi
Contributors ................................................. xiii
1. Defects in Ultra-Shallow Junctions .......................... 1
Mark E.Law, Renata Camillo-Castillo, Lance Robertson,
and Kevin S.Jones
2. Hydrogen-Related Defects in Silicon, Germanium,
and Silicon-Germanium Alloys ............................... 27
A.R.Peaker, V.P.Markevich, and L.Dobaczewski
3. Defects in Strained-Si MOSFETs ............................. 57
Yongke Sun and Scott E.Thompson
4. The Effect of Defects on Electron Transport in Nanometer-
Scale Electronic Devices: Impurities and Interface
Roughness .................................................. 71
M.V.Fischetti and S.Jin
5. Electrical Characterization of Defects in Gate
Dielectrics ............................................... 119
Dieter K.Schroder
6. Dominating Defects in the MOS System: Рb and E'
Centers ................................................... 163
Patrick M.Lenahan
7. Oxide Traps, Border Traps, and Interface Traps in Si02 .... 215
Daniel M.Fleetwood, Sokrates T.Pantelides,
and Ronald D.Schrimpf
8. From 3D Imaging of Atoms to Macroscopic Device
Properties ................................................ 259
S.J.Pennycook, M.F.Chisholm, K.van Benthem,
A.G.Marinopoulos, and Sokrates T.Pantelides
9. Defect Energy Levels in НfO2 and Related
High-K Gate Oxides ........................................ 283
J.Robertson, K.Xiong, and K.Tse
10. Spectroscopic Studies of Electrically Active Defects in
High-K Gate Dielectrics ................................... 305
Gerald Lucovsky
11. Defects in CMOS Gate Dielectrics .......................... 341
Eric Garfunkel, Jacob Gavartin, and Gennadi Bersuker
12. Negative Bias Temperature Instabilities in High-к
Gate Dielectrics .......................................... 359
M.Houssa, M.Aoulaiche, S.De Gendt, G.Groeseneken,
and M.M.Heyns
13. Defect Formation and Annihilation in Electronic Devices
and the Role of Hydrogen .................................. 381
Leonidas Tsetseris, Daniel M.Fleetwood, Ronald D.
Schrimpf, and Sokrates T.Pantelides
14. Toward Engineering Modeling of Negative Bias Temperature
Instability ............................................... 399
Tibor Grasser, Wolfgang Goes, and Ben Kaczer
15. Wear-Out and Time-Dependent Dielectric Breakdown in
Silicon Oxides ............................................ 437
John S.Suehle
16. Defects Associated with Dielectric Breakdown in
Si02-Based Gate Dielectrics ............................... 465
Jordi Suñé and Ernest Y. Wu
17. Defects in Thin and Ultrathin Silicon Dioxides ............ 497
Giorgio Cellere, Simone Gerardin, and Alessandro
Paccagnella
18. Structural Defects in Si02-Si Caused by Ion
Bombardment ............................................... 533
Antoine D.Touboul, Aminata Carvalho, Mathias
Marinoni, Frederic Saigne, Jacques Bonnet, and
Jean Gasiot
19. Impact of Radiation-Induced Defects on Bipolar Device
Operation ................................................. 551
Ronald D.Schrimpf, Daniel M.Fleetwood,
Ronald L.Pease, Leonidas Tsetseris, and
Sokrates T.Pantelides
20. Silicon Dioxide-Silicon Carbide Interfaces: Current
Status and Recent Advances ................................ 575
S. Dhar, Sokrates T. Pantelides, J.R. Williams,
and L.C. Feldman
21. Defects in SiC ............................................ 615
E.Janzén, A.Gali, A.Henry, I.G.Ivanov,
B.Magnusson, and N.T.Son
22. Defects in Gallium Arsenide ............................... 671
J.C.Bourgoin and H.J.von Bardeleben
Appendix A: Selected High-Impact Journal Articles on Defects
in Microelectronic Materials and Devices ...................... 685
Index ......................................................... 737
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